etch
| Option | Type | Default | Description |
|---|---|---|---|
| voltage | Float | 5.000000e+00 | electrode potential of the plasma etch system |
| ion_neutral_rat | o Float | 1.000000e-02 | concentration of ion:neutral flux ratio |
| reflected | Boolean | 0 | compute reflected neutrals? |
| speed | Float | 6.000000e-01 | speed at which CMP pad scrubs the wafer (m/s) |
| depthfactor | Float | 1.000000e+00 | Characteristic length factor that accounts for the fall of pressure from top of feature to bottom |
| MD | Boolean | 0 | molecular dynamics based target flux distribution |
| 3D | Boolean | 0 | run quasi-3D simulation assuming axisymmetry |
| surf_roughness | Boolean | 0 | add surface roughness using a simple harmonic function during sputtering |
| targetHeight | Float | 8.000000e+00 | distance between target and substrate in cm |
| targetDiameter | Float | 3.400000e+01 | target diameter in cm |
| alagator | Boolean | 0 | alagator velocity |
| rate | String | 0.0 | rate default units/min |
| pressure | Float | 1.800000e+04 | pressure applied at pad or in chamber in Pa |
| angular | Float | 1.000000e+01 | angular distribution full width half max in degrees |
| sp1 | Float | 1.000000e+00 | primary sticking probability |
| sp2 | Float | 9.000000e-01 | secondary sticking probability |
| store | String | name to store the rate for this machine | |
| dataspace | Float | 1.000000e-02 | spacing for data to drop across the deposit |
| type | Switch | Type | |
| isotropic | Boolean | 0 | iso etch |
| oldaniso | Boolean | 0 | aniso etch |
| aniso | Boolean | 0 | aniso etch |
| pecvd | Boolean | 0 | plasma enhanced CVD |
| plasma | Boolean | 0 | plasma etch |
| cmp | Boolean | 0 | chemical mechanical polish |
| sputter | Boolean | 0 | sputter deposition |
| arate | String | 1 | Alagator string to compute rate |
| EtchOrDep | Switch | etching or deposition | |
| etch | Boolean | 0 | etch |
| deposit | Boolean | 0 | deposit |
| mater | Switch | material specification | |
| Gas | Boolean | 0 | a material |
| gas | Boolean | 0 | a material |
| SiO2 | Boolean | 0 | a material |
| sio2 | Boolean | 0 | a material |
| Oxide | Boolean | 0 | a material |
| oxide | Boolean | 0 | a material |
| SpOx | Boolean | 0 | a material |
| GateOx | Boolean | 0 | a material |
| HfO2 | Boolean | 0 | a material |
| hfo2 | Boolean | 0 | a material |
| Si3N4 | Boolean | 0 | a material |
| si3n4 | Boolean | 0 | a material |
| Nitride | Boolean | 0 | a material |
| nitride | Boolean | 0 | a material |
| Silicon | Boolean | 0 | a material |
| silicon | Boolean | 0 | a material |
| Si | Boolean | 0 | a material |
| Germanium | Boolean | 0 | a material |
| Germanium | Boolean | 0 | a material |
| Ge | Boolean | 0 | a material |
| SiGe | Boolean | 0 | a material |
| sige | Boolean | 0 | a material |
| SiliconGermaniu | Boolean | 0 | a material |
| SiliconGe | Boolean | 0 | a material |
| SiGermanium | Boolean | 0 | a material |
| 4HSiC | Boolean | 0 | a material |
| 4hsic | Boolean | 0 | a material |
| 6HSiC | Boolean | 0 | a material |
| 6hsic | Boolean | 0 | a material |
| 3CSiC | Boolean | 0 | a material |
| 3csic | Boolean | 0 | a material |
| GaN | Boolean | 0 | a material |
| gan | Boolean | 0 | a material |
| AlGaN | Boolean | 0 | a material |
| algan | Boolean | 0 | a material |
| AlN | Boolean | 0 | a material |
| aln | Boolean | 0 | a material |
| Polysilicon | Boolean | 0 | a material |
| poly | Boolean | 0 | a material |
| Poly | Boolean | 0 | a material |
| polySilicon | Boolean | 0 | a material |
| PolySilicon | Boolean | 0 | a material |
| polySi | Boolean | 0 | a material |
| PolySi | Boolean | 0 | a material |
| Polysi | Boolean | 0 | a material |
| Oxynitride | Boolean | 0 | a material |
| oxynitride | Boolean | 0 | a material |
| Photoresist | Boolean | 0 | a material |
| PR | Boolean | 0 | a material |
| pr | Boolean | 0 | a material |
| photoresist | Boolean | 0 | a material |
| Metal | Boolean | 0 | a material |
| metal | Boolean | 0 | a material |
| Niobium | Boolean | 0 | a material |
| Nb | Boolean | 0 | a material |
| niobium | Boolean | 0 | a material |
| niob | Boolean | 0 | a material |
| NiobiumOxide | Boolean | 0 | a material |
| NbOx | Boolean | 0 | a material |
| nioboxide | Boolean | 0 | a material |
| niobOxide | Boolean | 0 | a material |
| niobiumOxide | Boolean | 0 | a material |
| niobiumoxide | Boolean | 0 | a material |
| Aluminum | Boolean | 0 | a material |
| Al | Boolean | 0 | a material |
| Alum | Boolean | 0 | a material |
| alum | Boolean | 0 | a material |
| aluminum | Boolean | 0 | a material |
| AluminumOxide | Boolean | 0 | a material |
| AlOx | Boolean | 0 | a material |
| alumoxide | Boolean | 0 | a material |
| alumOxide | Boolean | 0 | a material |
| aluminumOxide | Boolean | 0 | a material |
| aluminumoxide | Boolean | 0 | a material |
| semi | Boolean | 0 | a material |
| Invisible | Boolean | 0 | a material |
| Insulator | Boolean | 0 | a material |
| machine_name | String | machine specification for etch | |
| internal | Boolean | 1 | included for backward compatability |
| time | Float | 1.000000e+00 | etch time min |
| mask | String | mask for the aniso etch | |
| spacing | Float | 2.000000e-03 | fraction of the depth to etch to use as the tight grid spacing in the level set mesh |
| maxspac | Float | 5.000000e+00 | mutliplier of the tight grid spacing to use as the max grid spacing in the level set mesh |
| grid.angle | Float | 1.000000e+01 | place level set mesh lines when surface angle change is more than this value |
| skipmeshing | Boolean | 0 | don't do any meshing mosstly for 3d debugging also copy fields to fs |
| tetgen | Boolean | 0 | use tetgen for 3D remeshing instead of internal reduce |
| voxelinit | Boolean | 0 | initialize levelset off vdb data structure |
| debug | String | name of the debug plot window to use default is NULL | |
| plotdistance | Float | 1.000000e-02 | distance between plot contours |
| plottime | Float | -1.000000e+00 | time interval between plot contours (seconds) |
Raw -help output
Etch Length Scale Default is microns which can be changed with the option command Name Type Default Information voltage Float 5.000000e+00 electrode potential of the plasma etch system ion_neutral_ratio Float 1.000000e-02 concentration of ion:neutral flux ratio reflected Boolean 0 compute reflected neutrals? speed Float 6.000000e-01 speed at which CMP pad scrubs the wafer (m/s) depthfactor Float 1.000000e+00 Characteristic length factor that accounts for the fall of pressure from top of feature to bottom MD Boolean 0 molecular dynamics based target flux distribution 3D Boolean 0 run quasi-3D simulation assuming axisymmetry surf_roughness Boolean 0 add surface roughness using a simple harmonic function during sputtering targetHeight Float 8.000000e+00 distance between target and substrate in cm targetDiameter Float 3.400000e+01 target diameter in cm alagator Boolean 0 alagator velocity rate String 0.0 rate default units/min pressure Float 1.800000e+04 pressure applied at pad or in chamber in Pa angular Float 1.000000e+01 angular distribution full width half max in degrees sp1 Float 1.000000e+00 primary sticking probability sp2 Float 9.000000e-01 secondary sticking probability store String name to store the rate for this machine dataspace Float 1.000000e-02 spacing for data to drop across the deposit type Switch Type isotropic Boolean 0 iso etch oldaniso Boolean 0 aniso etch aniso Boolean 0 aniso etch pecvd Boolean 0 plasma enhanced CVD plasma Boolean 0 plasma etch cmp Boolean 0 chemical mechanical polish sputter Boolean 0 sputter deposition arate String 1 Alagator string to compute rate EtchOrDep Switch etching or deposition etch Boolean 0 etch deposit Boolean 0 deposit mater Switch material specification Gas Boolean 0 a material gas Boolean 0 a material SiO2 Boolean 0 a material sio2 Boolean 0 a material Oxide Boolean 0 a material oxide Boolean 0 a material SpOx Boolean 0 a material GateOx Boolean 0 a material HfO2 Boolean 0 a material hfo2 Boolean 0 a material Si3N4 Boolean 0 a material si3n4 Boolean 0 a material Nitride Boolean 0 a material nitride Boolean 0 a material Silicon Boolean 0 a material silicon Boolean 0 a material Si Boolean 0 a material Germanium Boolean 0 a material Germanium Boolean 0 a material Ge Boolean 0 a material SiGe Boolean 0 a material sige Boolean 0 a material SiliconGermanium Boolean 0 a material SiliconGe Boolean 0 a material SiGermanium Boolean 0 a material 4HSiC Boolean 0 a material 4hsic Boolean 0 a material 6HSiC Boolean 0 a material 6hsic Boolean 0 a material 3CSiC Boolean 0 a material 3csic Boolean 0 a material GaN Boolean 0 a material gan Boolean 0 a material AlGaN Boolean 0 a material algan Boolean 0 a material AlN Boolean 0 a material aln Boolean 0 a material Polysilicon Boolean 0 a material poly Boolean 0 a material Poly Boolean 0 a material polySilicon Boolean 0 a material PolySilicon Boolean 0 a material polySi Boolean 0 a material PolySi Boolean 0 a material Polysi Boolean 0 a material Oxynitride Boolean 0 a material oxynitride Boolean 0 a material Photoresist Boolean 0 a material PR Boolean 0 a material pr Boolean 0 a material photoresist Boolean 0 a material Metal Boolean 0 a material metal Boolean 0 a material Niobium Boolean 0 a material Nb Boolean 0 a material niobium Boolean 0 a material niob Boolean 0 a material NiobiumOxide Boolean 0 a material NbOx Boolean 0 a material nioboxide Boolean 0 a material niobOxide Boolean 0 a material niobiumOxide Boolean 0 a material niobiumoxide Boolean 0 a material Aluminum Boolean 0 a material Al Boolean 0 a material Alum Boolean 0 a material alum Boolean 0 a material aluminum Boolean 0 a material AluminumOxide Boolean 0 a material AlOx Boolean 0 a material alumoxide Boolean 0 a material alumOxide Boolean 0 a material aluminumOxide Boolean 0 a material aluminumoxide Boolean 0 a material semi Boolean 0 a material Invisible Boolean 0 a material Insulator Boolean 0 a material machine_name String machine specification for etch internal Boolean 1 included for backward compatability time Float 1.000000e+00 etch time min mask String mask for the aniso etch spacing Float 2.000000e-03 fraction of the depth to etch to use as the tight grid spacing in the level set mesh maxspac Float 5.000000e+00 mutliplier of the tight grid spacing to use as the max grid spacing in the level set mesh grid.angle Float 1.000000e+01 place level set mesh lines when surface angle change is more than this value skipmeshing Boolean 0 don't do any meshing mosstly for 3d debugging also copy fields to fs tetgen Boolean 0 use tetgen for 3D remeshing instead of internal reduce voxelinit Boolean 0 initialize levelset off vdb data structure debug String name of the debug plot window to use default is NULL plotdistance Float 1.000000e-02 distance between plot contours plottime Float -1.000000e+00 time interval between plot contours (seconds)
Examples:
Test/Coverage/cov_3d_etch_options.tclTest/Coverage/cov_adapt_split.tclTest/Coverage/cov_coordinate_ops.tclTest/Coverage/cov_crossconnect_2d.tclTest/Coverage/cov_etch_anisotropic.tcl